| PART |
Description |
Maker |
| M38510/02006BAB M38510/02006BAA M38510/02002BDB M3 |
CERAMIC CHIP/MIL-PRF-55681
Triple 3-input NAND Gate 3输入与非
Quad 2-input NAND Gate 输入与非
Single 8-input NAND Gate 输入与非
Dual 4-input NAND Gate 输入与非
Triple 3-input NAND Gate 输入与非
Dual 4-input NAND Gate 4输入与非
|
ITT, Corp.
Astrodyne, Inc.
Ecliptek, Corp.
Electronic Theatre Controls, Inc.
Bourns, Inc.
Newhaven Display International, Inc.
Cypress Semiconductor, Corp.
Samsung Semiconductor Co., Ltd.
|
| TC58DVM72A1F TC58DVM72A1FT00 TC58DVM72F1FT00 TC58D |
Flash - NAND
128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM
|
TOSHIBA[Toshiba Semiconductor]
|
| HCTS20MS HCTS20D_SAMPLE HCTS20DMSR HCTS20HMSR HCTS |
NAND-Gate, 4-Input, TTL Inputs, Dual, Rad-Hard, High-Speed, CMOS, Logic
Switch Boot; For Use With:Toggle Switches
Radiation Hardened Dual 4-Input NAND Gate HCT SERIES, DUAL 4-INPUT NAND GATE, CDFP14
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| K9F1208Q0A-XXB0 K9F1208Q0B K9F1208Q0A-DIB0 K9F1208 |
64M x 8 bit NAND flash memory, 2.7 - 3.6V
512Mb/256Mb 1.8V NAND Flash Errata
64M x 8 bit NAND flash memory, 1.70 - 1.95V
32M x 16 bit NAND flash memory, 2.7 - 3.6V
32M x 16 bit NAND flash memory, 1.70 - 1.95V
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| 74LVC2G00GF 74LVC2G00GD 74LVC2G00DP |
Dual 2-input NAND gate LVC/LCX/Z SERIES, DUAL 2-INPUT NAND GATE, PDSO8
Dual 2-input NAND gate 输入与非
|
NXP Semiconductors N.V.
|
| 74LVC132AD112 |
Quad 2-input NAND Schmitt trigger; Package: SOT108-1 (SO14); Container: Tube LVC/LCX/Z SERIES, QUAD 2-INPUT NAND GATE, PDSO14
|
NXP Semiconductors N.V.
|
| 74AUP1G38GF132 |
Low-power 2-input NAND gate (open drain); Package: SOT891 (XSON6); Container: Tape reel smd AUP/ULP/V SERIES, 2-INPUT NAND GATE, PDSO6
|
NXP Semiconductors N.V.
|
| 74LVC132A 74LVC132ABQ 74LVC132AD 74LVC132APW 74LVC |
Quad 2-input NAND Schmitt trigger; Package: SOT402-1 (TSSOP14); Container: Reel Pack, SMD, 13" LVC/LCX/Z SERIES, QUAD 2-INPUT NAND GATE, PDSO14
|
NXP Semiconductors N.V.
Philips Semiconductors
|
| TH58512FT |
A Single 3.3V 512MBit(32M × 8Bit) CMOS NAND EEPROM(单片3.3V 512M32M × 8 CMOS NAND EEPROM)
|
Toshiba Corporation
|
| TH58512FTI |
A Single 3.3V 512MBit(32M × 8Bit) CMOS NAND EEPROM(单片3.3V 512M32M × 8 CMOS NAND EEPROM)
|
Toshiba Corporation
|
| KIC7SZ00FU |
2 Input NAND Gate
SILICON MONOLITHIC CMOS DIGITAL INTEGRATED CIRCUIT(2-INPUT NAND GATE)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
